28 31 35 42 56 70 105 140 v 40 45 50 60 80 100 150 200 v 0.85 0.92 = 8a v SK840D-sk8200d 1 of 2 c/w pf 0.55 v 880d characteristic symbol 8.0 a schottky barrier diode feat ures m aximum r atings and electrical characteristics @t a =25 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r rm s reverse voltage v r( rm s) a v erage rectified output current @t l = 75 c (note 1) i o 8. 0 a non-repet itive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m a forward v oltage @i f fm p e ak reverse current @t a = 25 c at rated dc blocking voltage @t a = 100 c i rm 0. 1 20 ma t ypical junction capacitance (note 2) c j t ypical thermal resistance (note 1) r ja operat ing and storage temperature range t j , t st g -55 t o +150 c not e: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. sk 840d sk 850d sk 860d 8100d 8150d units 0.70 350 280 200 15 z ibo seno electronic engineering co., ltd. www.senocn.com 8200d 150 sk 845d SK840D-sk8200d sk sk sk sk -55 t o +125 to-252/dpak e: to-252/dpak, molded plastic mo unting position: any polarity: see diagram erminals: plated leads solderable per cas classification rating 94v-o plastic case material has ul flammability guard ring die construction for use in low voltage application low power loss, high efficiency ideally suited for automatic assembly m ec hanical data ! ! t mil- std- 202, method 208 ! ! ! lead free: for rohs / lead free version ! sc hottk y barrier chip ! ! ! ! !
2 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com SK840D-sk8200d SK840D-sk8200d r ati ng and characteristic curves fig.1-typical for ward current derating curve fig.2-typical forward characteristics 0.1 1.0 .01 10 50 instantaneous for ward current,(a) for w ard voltage,(v) pulse width 300us 1% duty cycle .1 .3 .5 .7 .9 1.1 1.3 1.5 3.0 50~60v 80~100v 20~45v tj=25 c 150~200v fig.3-maximum non-repetitive for w ard surge current 60 30 0 90 150 120 number of cycles a t 60hz 11 0 5 50 100 tj=25 c 8.3ms single half sine w ave jedec method peak forward surge current ,(a) fig.4 - typical reverse characteristics reverse leakage current , (ma) 0.001 0.01 0.1 1.0 100 10 0 percent of ra ted peak reverse voltage,(%) 20 40 60 80 100 20v~45v 50v~200v t2 5 c j = t 100 c j = average forw ard current ,(a) 2 4 6 8 10 12 0 0 20 40 60 80 100 120 140 160 180 200 case temperature,(c) 40v-45v 50v-200v
|
